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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17486

Title: Induced Variation in Barrier Height and Ohmic Formation of Oxidized Au/Ni/(NH4)2Sx-treated P-GaN
Authors: Lin, Yow-Jon;Lee, C. S.;Lee, C. T.
Contributors: 光電科技研究所
Date: 2002
Issue Date: 2013-10-02T08:39:06Z
Publisher: Optical Engineering Society
Relation: International Topical Meeting on Optics in Computing, : 99
Appears in Collections:[光電科技研究所] 會議論文

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