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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17487

Title: Study the Interfacial Layer for Ti/(NH4)2Sx-treated N-type GaN by using X-ray Hotoelectron Spectroscopy Measurement
Authors: Lee, C. T.;Lin, Yow-Jon;Lee, H. Y.;Lin, C. H.;Lin, S. C.
Contributors: 光電科技研究所
Date: 2002
Issue Date: 2013-10-02T08:39:07Z
Publisher: 光譜技術與表面科學研討會
Relation: 第二十屆光譜技術與表面科學研討會
Appears in Collections:[光電科技研究所] 會議論文

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