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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17492

Title: Gallium-vacancy-related Defects in Mg-doped GaN Activated in Air
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Date: 2003-07
Issue Date: 2013-10-02T08:39:11Z
Publisher: 光譜技術與表面科學研討會
Relation: 第二十一屆光譜技術與表面科學研討會, : 26
Appears in Collections:[光電科技研究所] 會議論文

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