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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Proceedings > Item 987654321/17495

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17495

Title:	Investigation of Enhancement Mechanism of Schottky Barrier Height on Oxidized Ir/AlGaN
Authors:	Hsu, C. W.;Lin, Yow-Jon
Contributors:	光電科技研究所
Date:	2003-11
Issue Date:	2013-10-02T08:39:13Z
Publisher:	Electron Device and Materials Symposia
Relation:	2003 Electron Device and Materials Symposia, : 394-396
Appears in Collections:	[Graduate Institute of Photonics Technologies] Proceedings

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