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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17508

Title: Schottky Barrier Heights of Ni/Au Contacts to Heavily Mg-doped P-GaN Films with and Without (NH4)2Sx Treatment from Current-voltage Measurements
Authors: You, Chang-Feng;Chu, Yow-Lin;Lin, Yow-Jon
Contributors: 光電科技研究所
Date: 2005-11
Issue Date: 2013-10-02T08:39:22Z
Publisher: 電子元件暨材料研討會
Relation: 2005年電子元件暨材料研討會
Appears in Collections:[光電科技研究所] 會議論文

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