National Changhua University of Education Institutional Repository : Item 987654321/17515

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29913661 Online Users : 304

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Proceedings > Item 987654321/17515

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17515

Title:	Formation Mechanisms of Nonalloyed Ohmic Contacts to P-type AlGaN with the Capping Layer
Authors:	Lin, Yow-Jon
Contributors:	光電科技研究所
Date:	2006-01
Issue Date:	2013-10-02T08:39:27Z
Publisher:	中華民國物理學會
Relation:	2006中華民國物理學會年會暨研究成果發表會
Appears in Collections:	[Graduate Institute of Photonics Technologies] Proceedings

Files in This Item:

There are no files associated with this item.