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Title: 鋁摻雜氧化鋅奈米粒子光電特性之研究
Optical and Electrical Properties of Al-doped ZnO Nanoparticles
Authors: 陳耀銘;林祐仲
Contributors: 光電科技研究所
Keywords: 溶膠-凝膠法;鋁摻雜;多聲子散射;光響應
Sol-gel;Al-doped;Multiple phonons scattering;Photoresponse
Date: 2011-12
Issue Date: 2013-10-08T02:35:43Z
Publisher: 臺灣真空科技學會
Abstract: 本研究利用溶膠- 凝膠法製作氧化鋅 (ZnO) 奈米粒子,探討摻雜不同濃度的鋁 (Al) 對ZnO 奈米粒子特性的影響;並利用 ZnO 奈米粒子製作光檢測器,探討元件光響應特性。經由掃描式電子顯微鏡、X 光繞射分析、光致螢光光譜以及拉曼光譜量測得知奈米粒子的材料特性。實驗結果顯示,將 Al 摻入 ZnO 後,因 Al 與 Zn 離子半徑不同影響原子排列結構導致結晶性變差,進而增加多聲子散射致使非輻射復合機率增加。此外,觀測有無摻 Al 的 ZnO 所製作之光檢測器,結果顯示摻 Al 的元件電流值較未摻 Al 的元件大,其原因為 Al3+ 取代 Zn2+會多出一個自由電子,使得載子濃度增加以及電阻率下降。然而,當 Al 摻雜濃度高於 5% 時,多聲子散射現象增加而使得電阻率再度上升。另外,關於元件光響應的反應速度探討得知,因摻雜 Al 的 ZnO 具有較多陷捕中心,因此摻 Al 的元件反應時間常數較未摻 Al 的元件大。
This study investigates the effect of Al content on the optical, electrical a nd structural properties of the sol-gel Al-doped ZnO nanoparticles by x-ray diffraction, scanning electron microscopy, photoluminescence and Raman scattering measurements. When more Al are substituted into the ZnO system the difference in ionic radii of Zn2+ and Al3+ starts playing an increasingly important role causing the presence of the multiple phonons scattering stress in the Al-doped ZnO nanoparticles. It is shown that the multiple phonons scattering may lead to an increase in the probability of nonradiative recombination. The dark current and photocurrent of the Al-doped ZnO device are larger than those of the ZnO device, due to a combined effect of the increased substitutional-Al (AlZn) density and the increased carrier concentration. However above 5% Al doping, resistivity again increases with the increase in the multiple phonons scattering processes. The photoresponse studies show that the time constants of the Al-doped ZnO device are larger than those of the ZnO device. This is because of the higher trap density of the Al-doped ZnO device than the ZnO device.
Relation: 真空科技, 24(4): 17-23
Appears in Collections:[光電科技研究所] 期刊論文

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