National Changhua University of Education Institutional Repository : Item 987654321/17758
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 29939791      線上人數 : 513
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17758

題名: 可撓式有機電晶體臨界特性調變與摻雜技術研究
The Study on the Threshold Characteristics Modification and Doping Technology in Flexible Organic Transistor
作者: 王右武
貢獻者: 光電科技研究所
日期: 2008
上傳時間: 2013-12-30T09:44:39Z
出版者: 行政院國家科學委員會
摘要: 本計畫主要目的，在於研究可撓式有機薄膜電晶體在臨界區域的電光特性變化，影響因子，與物理意義，從而進行其特性調變技術的研究與開發，製作出符合軟性電子產業需求之高效能、高可靠度、高均勻度之電子元件。本計畫將分成三年度執行。第一年，著重在OTFT 臨界區域之特性研究與分析，包括了基本的電光物理特性分析，諸如臨界電壓(Vth)，開啟電壓(Von)，次臨界斜率(SS)，能態密度(DOS)，載子傳導機制等，在此區域的作用與定義。以及上述參數與有機半導體薄膜特性之關連性質研究，第二年，則將著重在，如何調變臨界特性的技術開發，包括進行有機半導體摻雜，介面處理層改質，閘極絕緣層調變，與元件結構的改變。第三年，則著重將開發出之新臨界特性調變技術應用於新穎之有機電子系統或顯示器上，其開發載具將鎖定為環型震盪器(Ring Oscillator)，以及OTFT 驅動之OLED 顯示器背板，此二者分別為軟性電子，與軟性顯示器之標竿技術，且OTFT 之臨界特性對於其性能有特別重大之影響。計畫完成後，除產出相關論文與專利外，將能提供有機電子包括基礎理論與應用技術的完整研究，對於增進軟性電子產業與培育相關人才當有相當貢獻。
This project focuses on the study of the flexible organic thin film transistor (OTFT) threshold characteristics containing the physical meaning, definition, impact factors and even more the tuning technology. Eventually the high performance, high reliability, and high uniformity OTFTs would be produced for the flexible electronic industry. This is a project for three years. In the first year, we will focus on the basic research of the electric-optical and physical characteristics under the threshold regime for the flexible OTFT. The device parameters including the threshold voltage (Vth), switch on voltage (Von), sub-threshold slop (SS), density of states (DOS) and the mechanism of carrier transport would be study in details, especially the physical meanings and definitions of these parameters. This study would be correlated with the research of the organic semiconductor thin film characteristics, such as the morphology (AFM), crystalline (XRD), interface states (CV) and surface binding energy (XPS, Kelvin Probe,..), etc... In the second year, the modification technology of OTFT threshold characteristics would be studied through several approaches. The thermal transfer nano-imprint technology would be introduced to the doping of organic semiconductor for tuning the threshold characteristics. Furthermore, the interface treatment and device configuration would also be verified to find out the rule of the change of threshold characteristics. In the third year, the previous result would be applied to smart organic electronics. The OTFT ring oscillator and OTFT-OLED backplane are the representatives of flexible organic electronics and flexible display, respectively. These two applications are very sensitive and critical to the OTFT threshold characteristics. The research point was focused on the fine tune and uniformity of area threshold characteristics. Finally, this project would produce some journal papers, patents and also provide a whole picture about the organic electronics theory and application technology. Further, improve the domestic related industry and educate the talented persons.
關聯: 國科會計畫, 計畫編號: NSC97-2221-E018-025; 研究期間: 9708-9807
顯示於類別:[光電科技研究所] 國科會計畫

文件中的檔案:

檔案 大小格式瀏覽次數
2020600612002.pdf61KbAdobe PDF305檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋