National Changhua University of Education Institutional Repository : Item 987654321/17765

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29953407 Online Users : 535

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17765

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17765

Title:	Influence of Measuring Environment on the Electrical Characteristics of Pentacene-Based Thin Film Transistors
Authors:	Wang, Yu-Wu;Cheng, Horng-Long;Wang, Yi-Kai;Hu, Tang-Hsiang;Ho, Jia-Chong;Lee, Cheng-Chung;Lei, Tan-Fu;Yeh, Ching-Fa
Contributors:	光電科技研究所
Keywords:	Organic semiconductors;Electronic devices;Electrical properties and Measurements
Date:	2004-11
Issue Date:	2013-12-30T09:45:58Z
Publisher:	Elsevier
Abstract:	This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.
Relation:	Thin Solid Films, 467(1-2): 215-219
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	636	View/Open