English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6486/11658
Visitors : 23429409      Online Users : 49
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17767

Title: Sol-Gel-Derived Zn(1-x)MgxO Thin Films Used as Active Channel Layer of Thin-Film Transistors
Authors: Lee, Jen-Hao;Lin, Pang;Lee, Cheng-Chung;Ho, Jia-Chong;Wang, Yu-Wu
Contributors: 光電科技研究所
Keywords: Zn�1 x�Mgx O;Thin films;TFT;Sol gel;Donor level
Date: 2005
Issue Date: 2013-12-30T09:46:00Z
Publisher: The Japan Society of Applied Physics
Abstract: Sol-gel derived n-type Zn(1-x)MgxO (x=0-0.45) thin films and thin-film transistors (TFTs) with active channel layers made of the films were investigated. The films were prepared at 500.DEG.C.. The effects of Mg doping on the crystallinity, optical transparency, grain size, and charge-carrier concentration (n) of the films were examined. The Fermi level of the films, as derived from the temperature dependence of n, was -0.12 eV below the conduction band. The donor concentration and donor level (Ed) were derived by a curve fitting method based on the electrical neutrality condition. Ed was found to be -0.3 eV below the conduction band. The composition dependence of the TFT output characteristics was interpreted and correlated to the width of the depletion region adjacent to the grain boundaries. When the grains were almost depleted at x=0.2, the TFT showed an enhancement mode and an on/off ratio of 10'6'.
Relation: Japanese Journal of Applied Physics, 44(7A): 4784-4789
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML399View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback