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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/17769
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| Title: | Excimer Laser Irradiation Induced Suppression of Off-State Leakage Current in Organic Transistors |
| Authors: | Chou, Wei-Yang;Lin, Shih-Ting;Cheng, Horng-Long;Tang, Fu-Ching;Lin, Yow-Jon;You, Chang-Feng;Wang, Yu-Wu |
| Contributors: | 光電科技研究所 |
| Date: | 2007
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| Issue Date: | 2013-12-30T09:46:02Z
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| Publisher: | American Institute of Physics |
| Abstract: | The authors report the suppression of the off-state leakage current and subthreshold swing (SS) in inkjet-printed poly(3-hexylthiophene) thin-film transistors with asymmetric work function source and drain electrodes. Indium tin oxide (ITO) material was used as source/drain electrodes and the source electrode was irradiated by KrF excimer laser. The dominant mechanisms for the suppressive Ioff could be attributed to the increase in the work function of ITO source irradiated by the excimer laser. Lower trap state density formed on the laser irradiated source electrode. Holes could be easily injected into the channel at small lateral electric field resulting in smaller threshold voltage and SS. |
| Relation: | Applied Physics Letters, 90(22): 222103 |
| Appears in Collections: | [光電科技研究所] 期刊論文
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