National Changhua University of Education Institutional Repository : Item 987654321/17773

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 30055296 Online Users : 642

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17773

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17773

Title:	Properties of Transparent Yttrium Oxide Dielectric Films Prepared by sol–gel Process
Authors:	Tsay, Chien-Yie;Cheng, Chia-Hsiang;Wang, Yu-Wu
Contributors:	光電科技研究所
Keywords:	A.Films;A. Sol–gel processes;C. Dielectric properties;D. Y2O3
Date:	2012-03
Issue Date:	2013-12-30T09:46:05Z
Publisher:	Elsevier
Abstract:	In this research, yttrium oxide (Y2O3) gate dielectric films were deposited onto alkali-free glass substrates by a sol–gel process. This report describes the effects of annealing temperatures on the microstructural and electrical properties of sol–gel derived Y2O3 films. These sol–gel films were preheated at 300 °C for 10 min, and then annealed at 400–550 °C for 1 h. XRD results revealed that all annealed films exhibited preferential (2 2 2) orientation; films annealed at 450–550 °C were polycrystalline with cubic structures. The average transmittances of polycrystalline Y2O3 films were over 88.0% in the visible range. The electrical properties of the Y2O3 films were analyzed by capacitance–voltage (C–V) and current–voltage (I–V) measurements. Films annealed at 500 °C yielded the lowest leakage current density, 1.8 × 10−7 A/cm2, at an applied voltage of 5 V, and had a dielectric constant of 10.0 at 100 kHz.
Relation:	Ceramics International, 38(2): 1677-1682
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	707	View/Open