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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17783

Title: Analytical and T-CAD Modeling of Pentacene Thin-Film Transistors
Authors: Chen, Yet-Min;Chen, Yu-Sheng;Huang, Jian-Jang;Lee, Jiun-Haw;Wang, Yu-Wu;Wang, Yi-Kai
Contributors: 光電科技研究所
Date: 2006
Issue Date: 2013-12-30T09:46:30Z
Publisher: International Society for Optical Engineering
Abstract: Many researches report that the mobility in organic material is dependent on not only the gate field but also the grain size. There is also some evidence to prove that the gate length is strongly related to the carrier mobility. We construct both the analytical model of organic thin film transistor and the large signal circuit model designed by T-CAD to fit the measured I DS - V DS curves. We first apply basic I DS - V DS equations in both triode and saturation regions with mobility μ best fitted to measured I-V curves. The "best-fitted" μ increases with the gate length, and is related to the increase of total channel resistance due to the presence of small grains size of pentacene next to source/drain electrodes. We then use the Advanced Design System software to design the large signal circuit model. Similar to the MOSFET, we add the additional parameters to fit the I DS - V DS curves, ex: Rgd, Rgs, and Rp. Here, Rgd. With the circuit simulation, we find that Rgd presents the leakage current from gate to source, and it affects the slope of curves in the saturation region in the I DS - V DS curves. The equivalent circuit can fit the I DS - V DS curves very well with the proper parameter set.
Relation: Proceedings of SPIE, 6336: 63361H
Appears in Collections:[光電科技研究所] 會議論文

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