English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6486/11658
Visitors : 23429406      Online Users : 47
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17786

Title: N-channel Fluorinated Copper Phthalocyanine Thin-Film Transistors Utilizing Oxygen-Plasma-Treatment ITO Source and Drain Electrodes
Authors: Wang, Yu-Wu;Yen, Chen-Hsiang;Chou, Wei-Yang;Cheng, Horng-Long;Liu, Shyh-Jiun
Contributors: 光電科技研究所
Date: 2008
Issue Date: 2013-12-30T09:46:53Z
Publisher: The International Society for Optical Engineering
Abstract: In this study, device characterization and carrier transport properties of n-type fluorinated copper phthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) were investigated using bottom gate device configuration with oxygen-plasma-treatment indium-tin-oxide (ITO) bottom source and drain (S/D) contact. We fabricated F16CuPc-based OTFTs having comb-shaped channels with a series of channel lengths of 5∼100 μm at a fixed channel width. The electrical characteristics of OTFTs were measured by a Keithley 4200-SCS semiconductor parameter analyzer in a dark glove box in a nitrogen atmosphere to avoid the influence of measuring environments. The device characteristics were analyzed using the charge-sheet metal-oxide-semiconductor field-effect transistor model equation. We found that both the linear and saturation field-effect mobilities and threshold voltages of F16CuPc-based OTFTs increased with increasing channel length. The linear and saturated field-effect mobilities were gate-bias dependent in all devices with different channel dimensions. Moreover, the contact resistance between ITO S/D electrodes and F16CuPc and channel resistance of F16CuPc were investigated using the gated-transfer length method. The results of our experiments suggest that the contact resistance between ITO electrodes and F16CuPc plays an important role in current-voltage characteristics. Additionally, abnormal increases in saturated field-effect mobility at channel lengths below 10 μm were observed in our experimental devices and were attributed to short channel effects. Such non-ideal effects of the present F16CuPc-based OTFT devices were investigated in detail. In summary, we found that the oxygen-plasma-treatment ITO bottom contact S/D electrode-based F16CuPc OTFT devices were very durable and suitable to make large area transistor arrays with complicated integrated circuits by photolithography techniques.
Relation: Proceedings of SPIE, 7054: 705416
Appears in Collections:[光電科技研究所] 會議論文

Files in This Item:

File SizeFormat
2020600616004.pdf68KbAdobe PDF312View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback