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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Proceedings > Item 987654321/17788

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17788

Title:	The Comparison of Lithium Doping Impact to Solution Processed ZnO/InZnO Thin Film Transistors' Characteristics
Authors:	Wang, Yu-Wu;Fang, P. H.;Cheng, A. C.;Su, W. C.;Lin, P. R.
Contributors:	光電科技研究所
Keywords:	InZnO;Transistor;ZnO
Date:	2012
Issue Date:	2013-12-30T09:47:05Z
Abstract:	We report the impact of lithium doping to ZnO/InZnO thin film transistors' electrical and optical characteristics. A best device with mobility ∼0.94 cm2/vs, and an on/off current ratio over 106 were achieved. Further, the high ionization energy of lithium (5.39eV) led the transistor stabilizer than which without lithium doping.
Relation:	Proceedings of the 19th International Display Workshops, Volume 1: 391-394
Appears in Collections:	[Graduate Institute of Photonics Technologies] Proceedings

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