National Changhua University of Education Institutional Repository : Item 987654321/17788
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题名: The Comparison of Lithium Doping Impact to Solution Processed ZnO/InZnO Thin Film Transistors' Characteristics
作者: Wang, Yu-Wu;Fang, P. H.;Cheng, A. C.;Su, W. C.;Lin, P. R.
贡献者: 光電科技研究所
关键词: InZnO;Transistor;ZnO
日期: 2012
上传时间: 2013-12-30T09:47:05Z
摘要: We report the impact of lithium doping to ZnO/InZnO thin film transistors' electrical and optical characteristics. A best device with mobility ∼0.94 cm2/vs, and an on/off current ratio over 106 were achieved. Further, the high ionization energy of lithium (5.39eV) led the transistor stabilizer than which without lithium doping.
關聯: Proceedings of the 19th International Display Workshops, Volume 1: 391-394
显示于类别:[光電科技研究所] 會議論文

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