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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/18472
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| Title: | Interference Phenomena Due to a Double Bend in a Quantum Wire |
| Authors: | Wu, Jong-Ching;Wybourne, M. N.;Yindeepol, W.;Weisshaar, A.;Goodnick, S. M. |
| Contributors: | 物理學系 |
| Date: | 1991-07
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| Issue Date: | 2014-06-06T07:16:06Z
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| Publisher: | American Institute of Physics |
| Abstract: | Narrow channel devices were fabricated using a split‐gate high electron mobility transistor structure in which electrons are forced through a double‐bend discontinuity. The low‐temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend. |
| Relation: | Applied Physics Letters, 59(1): 102-104 |
| Appears in Collections: | [物理學系] 期刊論文
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| 2020200510001.pdf | 25Kb | Adobe PDF | 387 | View/Open |
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