English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6487/11649
Visitors : 28682651      Online Users : 153
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18472

Title: Interference Phenomena Due to a Double Bend in a Quantum Wire
Authors: Wu, Jong-Ching;Wybourne, M. N.;Yindeepol, W.;Weisshaar, A.;Goodnick, S. M.
Contributors: 物理學系
Date: 1991-07
Issue Date: 2014-06-06T07:16:06Z
Publisher: American Institute of Physics
Abstract: Narrow channel devices were fabricated using a split‐gate high electron mobility transistor structure in which electrons are forced through a double‐bend discontinuity. The low‐temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
Relation: Applied Physics Letters, 59(1): 102-104
Appears in Collections:[物理學系] 期刊論文

Files in This Item:

File SizeFormat
2020200510001.pdf25KbAdobe PDF387View/Open

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback