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Title: Interference Phenomena Due to a Double Bend in a Quantum Wire
Authors: Wu, Jong-Ching;Wybourne, M. N.;Yindeepol, W.;Weisshaar, A.;Goodnick, S. M.
Contributors: 物理學系
Date: 1991-07
Issue Date: 2014-06-06T07:16:06Z
Publisher: American Institute of Physics
Abstract: Narrow channel devices were fabricated using a split‐gate high electron mobility transistor structure in which electrons are forced through a double‐bend discontinuity. The low‐temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
Relation: Applied Physics Letters, 59(1): 102-104
Appears in Collections:[Department of Physics] Periodical Articles

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