National Changhua University of Education Institutional Repository : Item 987654321/18472

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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/18472

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18472

Title:	Interference Phenomena Due to a Double Bend in a Quantum Wire
Authors:	Wu, Jong-Ching;Wybourne, M. N.;Yindeepol, W.;Weisshaar, A.;Goodnick, S. M.
Contributors:	物理學系
Date:	1991-07
Issue Date:	2014-06-06T07:16:06Z
Publisher:	American Institute of Physics
Abstract:	Narrow channel devices were fabricated using a split‐gate high electron mobility transistor structure in which electrons are forced through a double‐bend discontinuity. The low‐temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
Relation:	Applied Physics Letters, 59(1): 102-104
Appears in Collections:	[Department of Physics] Periodical Articles

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