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題名: Interference Phenomena Due to a Double Bend in a Quantum Wire
作者: Wu, Jong-Ching;Wybourne, M. N.;Yindeepol, W.;Weisshaar, A.;Goodnick, S. M.
貢獻者: 物理學系
日期: 1991-07
上傳時間: 2014-06-06T07:16:06Z
出版者: American Institute of Physics
摘要: Narrow channel devices were fabricated using a split‐gate high electron mobility transistor structure in which electrons are forced through a double‐bend discontinuity. The low‐temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
關聯: Applied Physics Letters, 59(1): 102-104
顯示於類別:[物理學系] 期刊論文


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