National Changhua University of Education Institutional Repository : Item 987654321/18473
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24515461      Online Users : 78
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18473

Title: Negative Differential Conductance Observed in a Lateral Double Constriction Device
Authors: Wu, Jong-Ching;Wybourne, M. N.;Berven, C.;Goodnick, S. M.;Smith, Doran D.
Contributors: 物理學系
Date: 1992-11
Issue Date: 2014-06-06T07:16:18Z
Publisher: American Institute of Physics
Abstract: Lateral double point contact devices were fabricated using a split‐gate high electron mobility transistor. The low‐temperature source‐drain characteristics show pronounced S‐shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.
Relation: Applied Physics Letters, 61(20): 2425-2427
Appears in Collections:[Department of Physics] Periodical Articles

Files in This Item:

File SizeFormat
2020200510002.pdf23KbAdobe PDF352View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback