National Changhua University of Education Institutional Repository : Item 987654321/18473
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6491/11663
造訪人次 : 24648472      線上人數 : 47
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋


題名: Negative Differential Conductance Observed in a Lateral Double Constriction Device
作者: Wu, Jong-Ching;Wybourne, M. N.;Berven, C.;Goodnick, S. M.;Smith, Doran D.
貢獻者: 物理學系
日期: 1992-11
上傳時間: 2014-06-06T07:16:18Z
出版者: American Institute of Physics
摘要: Lateral double point contact devices were fabricated using a split‐gate high electron mobility transistor. The low‐temperature source‐drain characteristics show pronounced S‐shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.
關聯: Applied Physics Letters, 61(20): 2425-2427
顯示於類別:[物理學系] 期刊論文


檔案 大小格式瀏覽次數
2020200510002.pdf23KbAdobe PDF354檢視/開啟



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋