Please use this identifier to cite or link to this item:
|Title: ||Negative Differential Conductance in a Lateral Hot-electron Device|
|Authors: ||Wu, Jong-Ching;Wybourne, M. N.;Berven, C.;Goodnick, S. M.;Smith, Doran D.|
|Issue Date: ||2014-06-06T07:16:53Z
|Publisher: ||IOP Publishing Ltd|
|Abstract: ||We report on the observations of S-type negative differential conductance in the current-voltage characteristics of a pinched cavity quantum|
dot structure. An energy balance approach is used to explain the existence of bistable current-voltage characteristics due to thermal runaway of the hot carriers in the dot structure. This runaway is shown to arise from heating of carriers in the quantum dot by incident electrons injected over the barrier of the input constriction. The observed S-type negative differential conductance is controlled by a third-terminal gate bias, and may be turned on or off depending on the bias voltage. Thus the effect may be utilized to realize a multiterminal switching device.
|Relation: ||Semiconductor Science and Technology, 9(5S): 922-925|
|Appears in Collections:||[物理學系] 期刊論文|
Files in This Item:
All items in NCUEIR are protected by copyright, with all rights reserved.