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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18480

Title: Novel Scheme to Fabricate SiGe Nanowires Using Pulsed Ultraviolet Laser Induced Epitaxy
Authors: Deng, C.;Sigmon, T. W.;Guist, G. K.;Wu, Jong-Ching;Wybourne, M. N.
Contributors: 物理學系
Date: 1996
Issue Date: 2014-06-06T07:17:06Z
Publisher: American Vacuum Society
Abstract: A novel scheme is employed to fabricate SiGe nanowires in a Si(100) substrate using pulsed ultraviolet (UV) laser induced epitaxy. In particular, Si(100) substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. A thin film low temperature silicon oxide is then deposited on the substrate. SiGe nanowires with a cross section of ∼25×95 nm2 are formed using pulsed UV laser induced epitaxy. The structures are analyzed using scanning electron microscopy and cross‐sectional transmission electron microscopy. Potential applications of the wire structure include base formation in a lateral SiGe heterojunction bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.
Relation: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 14(3): 1860-1863
Appears in Collections:[物理學系] 期刊論文

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