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| 題名: | Formation and Characterization of Ultrasmall Dimension GeSi Wire Structure by Using Pulsed Laser‐induced Epitaxy |
| 作者: | Deng, C.;Sigmon, T. W.;Wu, Jong-Ching;Wybourne, M. N.;Rack, J. |
| 貢獻者: | 物理學系 |
| 日期: | 1996
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| 上傳時間: | 2014-06-06T07:17:17Z
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| 出版者: | American Institute of Physics |
| 摘要: | (100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser‐induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross‐sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser‐induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed. |
| 關聯: | Applied Physics Letters, 68(26): 3734-3736 |
| 顯示於類別: | [物理學系] 期刊論文
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