Loading...
|
Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/18481
|
| Title: | Formation and Characterization of Ultrasmall Dimension GeSi Wire Structure by Using Pulsed Laser‐induced Epitaxy |
| Authors: | Deng, C.;Sigmon, T. W.;Wu, Jong-Ching;Wybourne, M. N.;Rack, J. |
| Contributors: | 物理學系 |
| Date: | 1996
|
| Issue Date: | 2014-06-06T07:17:17Z
|
| Publisher: | American Institute of Physics |
| Abstract: | (100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser‐induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross‐sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser‐induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed. |
| Relation: | Applied Physics Letters, 68(26): 3734-3736 |
| Appears in Collections: | [物理學系] 期刊論文
|
Files in This Item:
| File |
Size | Format | |
|---|
| 2020200510007.pdf | 57Kb | Adobe PDF | 284 | View/Open |
|
All items in NCUEIR are protected by copyright, with all rights reserved.
|
