National Changhua University of Education Institutional Repository : Item 987654321/18481
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6469/11641
造访人次 : 19053350      在线人数 : 418
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/18481

题名: Formation and Characterization of Ultrasmall Dimension GeSi Wire Structure by Using Pulsed Laser‐induced Epitaxy
作者: Deng, C.;Sigmon, T. W.;Wu, Jong-Ching;Wybourne, M. N.;Rack, J.
贡献者: 物理學系
日期: 1996
上传时间: 2014-06-06T07:17:17Z
出版者: American Institute of Physics
摘要: (100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser‐induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross‐sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser‐induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed.
關聯: Applied Physics Letters, 68(26): 3734-3736
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
2020200510007.pdf57KbAdobe PDF240检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈