National Changhua University of Education Institutional Repository : Item 987654321/18482
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题名: Surface Evolution in a Pulsed Laser Induced Epitaxy Process of Submicron SiGe Wires
作者: Deng, C.;Sigmon, T. W.;Wu, Jong-Ching;Wybourne, M. N.
贡献者: 物理學系
关键词: Silicon;Substrates;Germanium;Pattern formation;Nanotechnology;Wires;Pulsed laser deposition;Surface reconstruction;Scanning electron microscopy;Atomic force microscopy;Transmission electron microscopy
日期: 1996-08
上传时间: 2014-06-06T07:17:28Z
出版者: The Electrochemical Society
摘要: (100) Si substrates are patterned with arrays of Ge wires ~60 nm in width and ~6 nm in thickness. Pulsed laser induced epitaxy (PLIE) is used in an attempt to fabricate ultrasmall dimension Ge1–xSix wires. After laser irradiation, interesting changes on the surface are observed. In particular, ripples as high as ~30 nm are formed after the 6 nm Ge wires are incorporated into the substrate. The ripples decrease in height with further laser irradiation. The height is a function of the Ge wire width. Nomarski, scanning electron, atomic force, and cross-sectional transmission electron microscopy are used in the analysis. Possible explanations for the growth of the features are discussed.
關聯: Journal of The Electrochemical Society, 143(8): 2678-2680
显示于类别:[物理學系] 期刊論文

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