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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18496

Title: A Light-induced Tunneling State in a Submicron Double Barrier Tunneling Diode with a Center-doped Well
Authors: Suen, Y. W.;Young, C. C.;Chang, C. J.;Wu, Jong-Ching;Wang, S. Y.;Lee, C. P.
Contributors: 物理學系
Keywords: Double barrier tunneling diode;Magnetic field;Impurity state
Date: 2000-02
Issue Date: 2014-06-06T07:17:50Z
Publisher: Elsevier
Abstract: We will present the observation of a light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the meta-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region.
Relation: Physica E: Low-dimensional Systems and Nanostructures, 6(1-4): 331-334
Appears in Collections:[物理學系] 期刊論文

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