National Changhua University of Education Institutional Repository : Item 987654321/18501

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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/18501

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18501

Title:	Selective Growth of Single InAs Quantum Dots Using Strain Engineering
Authors:	Lee, B. C.;Lin, S. D.;Lee, C. P.;Lee, H. M.;Wu, Jong-Ching;Sun, K. W.
Contributors:	物理學系
Date:	2002-01
Issue Date:	2014-06-06T07:17:54Z
Publisher:	American Institute of Physics
Abstract:	A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved.
Relation:	Applied Physics Letters, 80(2): 326-328
Appears in Collections:	[Department of Physics] Periodical Articles

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