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题名: Selective Growth of Single InAs Quantum Dots Using Strain Engineering
作者: Lee, B. C.;Lin, S. D.;Lee, C. P.;Lee, H. M.;Wu, Jong-Ching;Sun, K. W.
贡献者: 物理學系
日期: 2002-01
上传时间: 2014-06-06T07:17:54Z
出版者: American Institute of Physics
摘要: A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved.
關聯: Applied Physics Letters, 80(2): 326-328
显示于类别:[物理學系] 期刊論文


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