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題名: | Size Effects on Switching Field of Ring-shaped Permalloy Elements |
作者: | Chang, C. C.;Chang, Y. C.;Wu, Jong-Ching;Wei, Z. H.;La, M. F.;Chang, C. R.;Kuo, J. H. |
貢獻者: | 物理學系 |
關鍵詞: | Permalloy ring;Magnetoresistance;Coherent rotation |
日期: | 2004-11
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上傳時間: | 2014-06-06T07:18:08Z
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出版者: | Elsevier |
摘要: | The magnetization switching behavior of permalloy ring elements as a function of ring diameter and film thickness by magnetoresistance measurement is presented. The permalloy ring elements, with diameters of 2–5 μm and a thickness of 14–66 nm, were fabricated by electron beam lithography through a lift-off process. The switching field for the transition from the vortex state to the onion state increases with decreasing size. Furthermore, the switching field increases with increasing thickness up to a critical value of about 53–65 nm, over which the switching field tends to decrease with increasing thickness. |
關聯: | Journal of Magnetism and Magnetic Materials, 282: 351-354 |
顯示於類別: | [物理學系] 期刊論文
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