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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18529

Title: Local Current Distribution and Electrical Properties of a Magnetic Tunnel Junction Using Conducting Atomic Force Microscopy
Authors: Canizo-Cabrera, A.;Li, Simon C.;Shu, Min-Fong;Lee, Jia-Mou;Garcia-Vazquez, Valentin.;Chen, C. C.;Wu, Jong-Ching;Takahashi, M.;Wu, Te-Ho
Contributors: 物理學系
Keywords: Conductive atomic force microscopy (CAFM);Dielectric tunnel capacitance;Local electric transport;Magnetic tunnel junction;Magnetoresistance ratio;Ramping effect;Model
Date: 2005-02
Issue Date: 2014-06-06T07:18:26Z
Publisher: IEEE
Abstract: Local topographical and electrical properties were simultaneously measured for a magnetic tunnel junction formed by Ta (50 �)/Ni-Fe (20 �)/Cu (50 �)/Mn75 Ir25 (100 �)/Co70Fe30(40 �)/Al-O (8-15 �)/Co70Fe30 (40 �)/Ni-Fe (100 �)/Ta (50 �). Local current-voltage (I-V) characteristic curves were obtained for different contrast levels in the electrical current distribution images on the test sample. With the purpose of obtaining quantitative values for the barrier characteristics, data was analyzed by the Simmons' equation from -1.0 to 1.0 V. The magnetoresistance ratio values were estimated to be 35.02%, with a bias voltage of 0.36 V, when applying a magnetic field of �200 Oe. In addition, a study on the ramping effect on the dielectric tunneling capacitance and analytical resistance-capacitance (RC) model were carried out.
Relation: IEEE Transactions on Magnetics, 41(2): 887-891
Appears in Collections:[物理學系] 期刊論文

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