National Changhua University of Education Institutional Repository : Item 987654321/18529
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 25195685      在线人数 : 69
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/18529

题名: Local Current Distribution and Electrical Properties of a Magnetic Tunnel Junction Using Conducting Atomic Force Microscopy
作者: Canizo-Cabrera, A.;Li, Simon C.;Shu, Min-Fong;Lee, Jia-Mou;Garcia-Vazquez, Valentin.;Chen, C. C.;Wu, Jong-Ching;Takahashi, M.;Wu, Te-Ho
贡献者: 物理學系
关键词: Conductive atomic force microscopy (CAFM);Dielectric tunnel capacitance;Local electric transport;Magnetic tunnel junction;Magnetoresistance ratio;Ramping effect;Model
日期: 2005-02
上传时间: 2014-06-06T07:18:26Z
出版者: IEEE
摘要: Local topographical and electrical properties were simultaneously measured for a magnetic tunnel junction formed by Ta (50 �)/Ni-Fe (20 �)/Cu (50 �)/Mn75 Ir25 (100 �)/Co70Fe30(40 �)/Al-O (8-15 �)/Co70Fe30 (40 �)/Ni-Fe (100 �)/Ta (50 �). Local current-voltage (I-V) characteristic curves were obtained for different contrast levels in the electrical current distribution images on the test sample. With the purpose of obtaining quantitative values for the barrier characteristics, data was analyzed by the Simmons' equation from -1.0 to 1.0 V. The magnetoresistance ratio values were estimated to be 35.02%, with a bias voltage of 0.36 V, when applying a magnetic field of �200 Oe. In addition, a study on the ramping effect on the dielectric tunneling capacitance and analytical resistance-capacitance (RC) model were carried out.
關聯: IEEE Transactions on Magnetics, 41(2): 887-891
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML449检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈