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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/18542
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| Title: | Tunneling Magnetoresistance of Magnetic Tunneling Junction Cell Measured by Conducting Atomic Force Microscopy with Ramping Dc Bias Voltage Rate |
| Authors: | Shu, Min-Fong;Canizo-Cabrera, A.;Hsu, Chih-Cheng;Chen, C. C.;Wu, Jong-Ching;Li, Simon C.;Yang, Chao-Chen;Wu, Te-Ho |
| Contributors: | 物理學系 |
| Date: | 2006
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| Issue Date: | 2014-06-06T07:18:36Z
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| Publisher: | American Institute of Physics |
| Abstract: | Magnetoresistance (MR) ratio in a magnetic tunneling junction cell with a structure of SiO2 (20 nm)/Ta (5 nm)/Cu (20 nm)/Ta (5 nm)/NiFe (2 nm)/Cu (5 nm)/MnIr (10 nm)/CoFe (4 nm)/Al–O (1.5 nm)/CoFe (4 nm)/NiFe (20 nm)/Ta (50 nm) was measured by conducting atomic force microscopy to obtain I‐V curves. Tunnel magnetoresistance was characterized from these nonlinear I‐V curves. MR values of 33.9%, 30.5%, 30.3%, and 28% were obtained when applying magnetic fields of ±150 Oe at various dc bias voltage ramping rates. Several ramping rate values were 0.498, 4.65, 9.3, and 27.9 Hz, respectively. |
| Relation: | Journal of Applied Physics, 99(8): 08R705 |
| Appears in Collections: | [物理學系] 期刊論文
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