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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18542

Title: Tunneling Magnetoresistance of Magnetic Tunneling Junction Cell Measured by Conducting Atomic Force Microscopy with Ramping Dc Bias Voltage Rate
Authors: Shu, Min-Fong;Canizo-Cabrera, A.;Hsu, Chih-Cheng;Chen, C. C.;Wu, Jong-Ching;Li, Simon C.;Yang, Chao-Chen;Wu, Te-Ho
Contributors: 物理學系
Date: 2006
Issue Date: 2014-06-06T07:18:36Z
Publisher: American Institute of Physics
Abstract: Magnetoresistance (MR) ratio in a magnetic tunneling junction cell with a structure of SiO2 (20 nm)/Ta (5 nm)/Cu (20 nm)/Ta (5 nm)/NiFe (2 nm)/Cu (5 nm)/MnIr (10 nm)/CoFe (4 nm)/Al–O (1.5 nm)/CoFe (4 nm)/NiFe (20 nm)/Ta (50 nm) was measured by conducting atomic force microscopy to obtain I‐V curves. Tunnel magnetoresistance was characterized from these nonlinear I‐V curves. MR values of 33.9%, 30.5%, 30.3%, and 28% were obtained when applying magnetic fields of ±150 Oe at various dc bias voltage ramping rates. Several ramping rate values were 0.498, 4.65, 9.3, and 27.9 Hz, respectively.
Relation: Journal of Applied Physics, 99(8): 08R705
Appears in Collections:[物理學系] 期刊論文

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