National Changhua University of Education Institutional Repository : Item 987654321/18542
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 30060236      在线人数 : 555
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/18542

题名: Tunneling Magnetoresistance of Magnetic Tunneling Junction Cell Measured by Conducting Atomic Force Microscopy with Ramping Dc Bias Voltage Rate
作者: Shu, Min-Fong;Canizo-Cabrera, A.;Hsu, Chih-Cheng;Chen, C. C.;Wu, Jong-Ching;Li, Simon C.;Yang, Chao-Chen;Wu, Te-Ho
贡献者: 物理學系
日期: 2006
上传时间: 2014-06-06T07:18:36Z
出版者: American Institute of Physics
摘要: Magnetoresistance (MR) ratio in a magnetic tunneling junction cell with a structure of SiO2 (20 nm)/Ta (5 nm)/Cu (20 nm)/Ta (5 nm)/NiFe (2 nm)/Cu (5 nm)/MnIr (10 nm)/CoFe (4 nm)/Al–O (1.5 nm)/CoFe (4 nm)/NiFe (20 nm)/Ta (50 nm) was measured by conducting atomic force microscopy to obtain I‐V curves. Tunnel magnetoresistance was characterized from these nonlinear I‐V curves. MR values of 33.9%, 30.5%, 30.3%, and 28% were obtained when applying magnetic fields of ±150 Oe at various dc bias voltage ramping rates. Several ramping rate values were 0.498, 4.65, 9.3, and 27.9 Hz, respectively.
關聯: Journal of Applied Physics, 99(8): 08R705
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML567检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈