Loading...
|
Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/18549
|
| Title: | New Technique for Fabrication of Individual Carbon-Nanotube Field Emitters |
| Authors: | Lee, Ming-Way;Chen, Yu-Shen;Lai, Wei-Ciao;Suen, Yuen-Wu;Wu, Jong-Ching |
| Contributors: | 物理學系 |
| Keywords: | Field emission;Carbon nanotube;Individual;Enhancement factor |
| Date: | 2007-01
|
| Issue Date: | 2014-06-06T07:18:41Z
|
| Publisher: | The Japan Society of Applied Physics |
| Abstract: | Currently, field emission experiments on individual carbon nanotubes (CNTs) are carried out by placing the CNTs inside a transmission electron microscope. In this work we report an alternative method of fabricating and measuring individual multiwalled CNT-field emitters fabricated on a silicon substrate by the e-beam lithography technique. A field emission experiment is then performed in a high-vacuum system for CNTs with various radii, lengths, interelectrode separations and tip structures. The geometrical enhancement factors .BETA. exhibit three ranges: low (.BETA.-10), medium (.BETA.-100) and high (.BETA.>200) depending on whether the CNT tip is closed-tipped, open-tipped with a flat end or open-tipped with an oblique-angle end, respectively. The turn-on voltage Vto also depends on the tip structure and the lowest Vto occurs in open-tipped-with-oblique-angle CNTs. The geometrical enhancement factor depends on the tube geometry via a linear equation .BETA.=.BETA.0(1+d/kr) with k.IMAGE.40 and .BETA.0 equals 163 and 53 for the high-.BETA. and medium-.BETA. lines, respectively, where r is the radius and d is the CNT tip-anode spacing. The new method may open a path leading to the integration of nanotube field emitters with other miniature devices using semiconductor integrating technology. |
| Relation: | Japanese Journal of Applied Physics, 46(1): 430-433 |
| Appears in Collections: | [物理學系] 期刊論文
|
Files in This Item:
| File |
Size | Format | |
|---|
| index.html | 0Kb | HTML | 438 | View/Open |
|
All items in NCUEIR are protected by copyright, with all rights reserved.
|
