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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/18551
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| Title: | Perpendicular Magnetic Tunneling Junction With Double Barrier Layers for MRAM Application |
| Authors: | A. Canizo Cabrera;Chang, Che-Hao;Hsu, Chih-Cheng;Weng, Ming-Chi;Chen, C. C.;Chao, C. T.;Wu, Jong-Ching;Chang, Yang-Hua;Wu, Te-Ho |
| Contributors: | 物理學系 |
| Keywords: | Magnetic tunneling junction (MTJ);Magnetoresistance (MR) |
| Date: | 2007-02
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| Issue Date: | 2014-06-06T07:18:43Z
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| Publisher: | IEEE |
| Abstract: | A double-barrier-layer perpendicular magnetic tunneling junction (DpMTJ) structure consisting of Si substrate/Pt/GdFeCo/AlOx/GdFeCo/FeCo/AlOx/FeCo/TbFeCo/Pt/Ti-cap was prepared by a direct current (dc) and radio frequency (RF) magnetron sputtering method. An elliptical DpMTJ element with 3.5 mumtimes2.5 mum size was fabricated using a top-down technique. A conducting atomic force microscope (CAFM) was used to obtain I-V curves of DpMTJ structures. We obtained the magnetoresistance (MR) ratio value from measured I-V curves by applying two opposite magnetic fields value of plusmn200 Oe perpendicular to the plane of film. The MR ratio was reached as high as 74% at zero applied bias voltage. Furthermore, the MR ratio decreased as bias voltage increased. It could make the DpMTJ structure to be used in the high-density MRAM devices |
| Relation: | IEEE Transactions on Magnetics, 43(2): 914-916 |
| Appears in Collections: | [物理學系] 期刊論文
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