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题名: Repair Effect on Patterned CoFeB-based Magnetic Tunneling Junction Using Rapid Thermal Annealing
作者: Wu, Kuo-Ming;Wang, Yung-Hung;Chen, Wei-Chuan;Yang, Shan-Yi;Shen, Kuei-Hung;Kao, Ming-Jer;Tsai, Ming-Jinn;Kuo, Cheng-Yi;Wu, Jong-Ching;Horng, Lance
贡献者: 物理學系
关键词: Magnetic tunneling junction (MTJ);Annealing effect
日期: 2007-03
上传时间: 2014-06-06T07:18:44Z
出版者: Elsevier
摘要: Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co60Fe20B20 was studied through magnetoresistance (R–H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R–H loops were enhanced from 100 °C to 250 °C. Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 °C rapid annealing and still shows about 25% TMR even after 400 °C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature.
關聯: Journal of Magnetism and Magnetic Materials, 310(2) Part3: 1920-1922
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