National Changhua University of Education Institutional Repository : Item 987654321/18557
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 24748133      在线人数 : 53
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/18557

题名: Parameter Optimization for an ICP Deep Silicon Etching System
作者: Chen, S. C.;Lin, Y. C.;Wu, Jong-Ching;Horng, Lance;Cheng, C. H.
贡献者: 物理學系
日期: 2007-03
上传时间: 2014-06-06T07:18:47Z
出版者: SpringerLink
摘要: The paper aims at investigating the parameter optimization of silicon micro- and nano-sized etching by an inductive coupled plasma-reactive ion etching system. The source power and the SF6 gas pressure are two main parameters that dominate etching. A pre-test is conducted
to estimate the process window of the SF6 gas pressure at some given source powers. The process window is a parameter range in which the etching result is acceptable but may not be the best. In order to achieve excellent etching quality, the Taguchi experimental method is applied to evaluate parameters and find their optimum conditions.With the source power and SF6 gas pressure being set into the process window, four
parameters, which are the substrate temperature, the bias power, the gas cycle time and the C4F8 gas flow rate, are evaluated and optimized for micro- and nanosized etching. An impressive result, 200-nm-diameter pillar array with the pitch of 400 nm, is realized.
關聯: Microsystem Technologies, 13(5-6): 465-474
显示于类别:[物理學系] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML432检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈