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| 題名: | Effect of Transient Annealing on Patterned CoFeB-based Magnetic Tunnel Junctions |
| 作者: | Wu, Kuo-Ming;Huang, Chao-Hsien;Lin, Shiao-Chi;Kao, Ming-Jer;Tsai, Ming-Jinn;Wu, Jong-Ching;Horng, Lance |
| 貢獻者: | 物理學系 |
| 日期: | 2007-12
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| 上傳時間: | 2014-06-06T07:18:49Z
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| 出版者: | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| 摘要: | In this study, the transient annealing effect on the switching behavior of microstructured Co60Fe20B20-based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)-oxide/ CoFeB (2)/ Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200∼250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C. |
| 關聯: | Physica status solidi (a) 204(12): 3934-3937 |
| 顯示於類別: | [物理學系] 期刊論文
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