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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18565

Title: Effect of Annealing Temperature on Exchange Coupling in NiFe/FeMn and FeMn/NiFe Systems
Authors: Chen, Kuang-Ching;Wu, Y. H.;Wu, Kuo-Ming;Wu, Jong-Ching;Horng, Lance;Young, S. L.
Contributors: 物理學系
Date: 2007
Issue Date: 2014-06-06T07:18:52Z
Publisher: American Institute of Physics
Abstract: Most studies on exchange bias in spin valves are for antiferromagnetic/ferromagnetic structures, and Fe[50]Mn[50]/Ni[79]Fe[21] is widely used. The results of the exchange-bias field (Hex) and coercivity (Hc) as a function of the annealing temperature in NiFe/FeMn and FeMn/NiFe systems are given in the study. We prepare two types of films, type I: substrate//Ta/NiFe/FeMn/Ta and type II: substrate/Ta/FeMn/NiFe/Ta, respectively. Annealing was performed at 150–450 °C under 720 Oe for 2 h, Hex and Hc of type I samples increase slightly with the increase of the annealing temperature. But Hex and Hc of type II samples increase rapidly after annealing over 300 °C, then decrease after annealing at 375 °C. The strong exchange-bias field and low coercivity were exhibited for type I samples, where NiFe is the buffer layer and is also the pinned layer. In type II samples, the increase in the exchange-bias field is attributed to the altered interface of FeMn/NiFe due to interdiffusion. The interpretation of the fluctuation of the magnetic properties for these two types of films in connection with the crystalline texture and morphology by x-ray scattering technologies as well as atomic force microscopy was given. This research leads to a better understanding of the annealing temperature and microstructures in the two types of bilayers.
Relation: Journal of Applied Physics, 101(9): 09E516
Appears in Collections:[物理學系] 期刊論文

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