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請使用永久網址來引用或連結此文件:
http://ir.ncue.edu.tw/ir/handle/987654321/18574
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| 題名: | A Novel Bottom-Up Fabrication Process for Controllable Sub-100 nm Magnetic Multilayer Devices |
| 作者: | Kuo, Ming-Yuan;Ou, J. Y.;Horng, Lance;Wu, Jong-Ching |
| 貢獻者: | 物理學系 |
| 關鍵詞: | CPP configuration;Phase changed memory;Spin valve;Stencil mask |
| 日期: | 2008-11
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| 上傳時間: | 2014-06-06T07:18:59Z
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| 出版者: | IEEE |
| 摘要: | We present a fabrication process for controllable sub-100 nm magnetic multilayer devices, pseudo spin valve, using a novel bottom-up technique. Stack of multilayer devices with diameter in nanometer scales were successfully made through a template of Ge/SiO2 stencil mask with very well undercutting profile of SiO2 insulating layer. The niche of using this method is that a device with diameter below 100 nm can be made through a twice larger Ge hole of stencil mask. The desired dimension of the active device layers was achieved with a thick buffer metal layer deposited first, giving rise to a narrower neck for later active layers deposition. Moreover, this stencil mask technique can be utilized as device templates of not only magnetic multilayer devices but also other nano-sized devices such as phase changed memory devices. |
| 關聯: | IEEE Transactions on Magnetics, 44(11): 2734-2736 |
| 顯示於類別: | [物理學系] 期刊論文
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