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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18592

Title: The Use of Ga16Sb84 Alloy for Electronic Hase-change Memory
Authors: Chang, Chih-Chung;Chao, Chien-Tu;Wu, Jong-Ching;Yew, Tri-Rung;Tsai, Ming-Jinn;Chin, Tsung-Shune
Contributors: 物理學系
Keywords: Phase-change material;Ga-Sb alloys;Crystallization;Electrical properties;Thermal stability
Date: 2011-05
Issue Date: 2014-06-06T07:19:34Z
Publisher: Elsevier
Abstract: The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga16Sb84 film to meet this purpose. Amorphous Ga16Sb84 film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga16Sb84 memory cells demonstrate set–reset switching at a pulse width of 10 ns and have a durability of >105 cycles.
Relation: Scripta Materialia, 64(9): 801-804
Appears in Collections:[物理學系] 期刊論文

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