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NCUEIR > College of Science > Department of Physics > Periodical Articles > Item 987654321/18592

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/18592

Title:	The Use of Ga16Sb84 Alloy for Electronic Hase-change Memory
Authors:	Chang, Chih-Chung;Chao, Chien-Tu;Wu, Jong-Ching;Yew, Tri-Rung;Tsai, Ming-Jinn;Chin, Tsung-Shune
Contributors:	物理學系
Keywords:	Phase-change material;Ga-Sb alloys;Crystallization;Electrical properties;Thermal stability
Date:	2011-05
Issue Date:	2014-06-06T07:19:34Z
Publisher:	Elsevier
Abstract:	The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga16Sb84 film to meet this purpose. Amorphous Ga16Sb84 film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga16Sb84 memory cells demonstrate set–reset switching at a pulse width of 10 ns and have a durability of >105 cycles.
Relation:	Scripta Materialia, 64(9): 801-804
Appears in Collections:	[Department of Physics] Periodical Articles

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