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Title: Fabrication of Perpendicular MgO-Based Magnetic Tunnel Junctions With TbFe/FeCo Electrodes
Authors: Ye, Lin-Xiu;Lee, Ching-Ming;Lee, Jia-Mou;Lin, Jia-Hua;Liu, Jin-Zhen;Wu, Jong-Ching;Wu, Te-Ho
Contributors: 物理學系
Keywords: Magnetic tunnel junctions (MTJs);Perpendicular magnetic anisotropy;Rare-earth-transition metal;Tunnel magnetoresistance(TMR)
Date: 2011-10
Issue Date: 2014-06-06T07:19:46Z
Publisher: IEEE
Abstract: This paper reports the results obtained using TbFe and FeCo alloys as the electrodes of MgO-based perpendicular magnetic tunnel
junctions (pMTJs). Without annealing treatment, the as-deposited structure showed MgO (001) crystalline texture. The tunnel magnetoresistance (TMR) ratio measured from the patterned cell of size 3 6 m was 9.5% at room temperature. However, the coercivities
of both free and fixed layers were reduced considerably due to the damage caused from the patterning process. The hysteresis loop measurements showed that the magnetic properties of the structures can still be maintained after annealing up to 350 C.
Relation: IEEE Transactions on Magnetics, 47(10): 3857-3859
Appears in Collections:[Department of Physics] Periodical Articles

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