National Changhua University of Education Institutional Repository : Item 987654321/18595
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6491/11663
造訪人次 : 24748741      線上人數 : 42
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋


題名: Fabrication of Perpendicular MgO-Based Magnetic Tunnel Junctions With TbFe/FeCo Electrodes
作者: Ye, Lin-Xiu;Lee, Ching-Ming;Lee, Jia-Mou;Lin, Jia-Hua;Liu, Jin-Zhen;Wu, Jong-Ching;Wu, Te-Ho
貢獻者: 物理學系
關鍵詞: Magnetic tunnel junctions (MTJs);Perpendicular magnetic anisotropy;Rare-earth-transition metal;Tunnel magnetoresistance(TMR)
日期: 2011-10
上傳時間: 2014-06-06T07:19:46Z
出版者: IEEE
摘要: This paper reports the results obtained using TbFe and FeCo alloys as the electrodes of MgO-based perpendicular magnetic tunnel
junctions (pMTJs). Without annealing treatment, the as-deposited structure showed MgO (001) crystalline texture. The tunnel magnetoresistance (TMR) ratio measured from the patterned cell of size 3 6 m was 9.5% at room temperature. However, the coercivities
of both free and fixed layers were reduced considerably due to the damage caused from the patterning process. The hysteresis loop measurements showed that the magnetic properties of the structures can still be maintained after annealing up to 350 C.
關聯: IEEE Transactions on Magnetics, 47(10): 3857-3859
顯示於類別:[物理學系] 期刊論文


檔案 大小格式瀏覽次數



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋