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題名: Resonance Phenomenon in Double-bend-point Contact Structures
作者: Wu, Jong-Ching;Wybourne, Martin N.;Weisshaar, Andreas;Goodnick, Stephen M.
貢獻者: 物理學系
日期: 1992-09
上傳時間: 2014-07-01T08:03:15Z
出版者: SPIE
摘要: Quantum wires with double bend discontinuities have been fabricated in modulation-doped field-effect transistors. The low temperature conductance shows resonant peaks in the lowest quantized conductance plateau. The double bend constitutes an electron cavity where the number of peaks is directly related to the cavity length. This view is supported by comparison to the theoretical conductance calculated from a generalized mode-matching theory. The experimental peak conductivity decreases with cavity length, which is consistent with elastic scattering due to random disorder in the quantum wire. Magnetic field studies show quenching of the resonance structure when the cyclotron radius approaches the one-dimensional channel width.
關聯: SPIE, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, 1676: 200-209
顯示於類別:[物理學系] 會議論文

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