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題名: 中台灣奈米技術科學與工程核心設施服務計畫---子計畫三:彰化師範大學部分(II)
Infrastructure Project of Nanoscience and Technology Center in Central Taiwan(II)
作者: 吳仲卿;郭艷光;黃滿芳;洪連輝;林義成;陳偉立;沈志雄
貢獻者: 物理學系
關鍵詞: 核心設施;電漿耦合活性離子蝕刻機;高壓反應爐;分子束磊晶機台
Nanostructure;ICP RIE;MBE;Nanofabrication
日期: 2007
上傳時間: 2014-08-06T05:04:24Z
摘要: 這是第二期第二年的精簡報告,在第二期的第一年我們已完成測試三部機台並進行服務;已完成測試及進行服務的機台為第一期採購之重要的核心設施,該設施分別是用於深蝕刻矽晶片之電漿耦合活性離子蝕刻機、合成二氧化鈦奈米管之具備紅外線光譜分析之高壓反應爐及分子束磊晶系統。前者已展示200奈柱狀結構且具20比1的高深寬比能力,此設備之建立不僅加強及補足彰化師大在奈米製程上的能力及研發能量,對於中部微機電(奈米機電)研究專長之同仁提供了預期中相當多的服務。而二氧化鈦奈米管的合成也提供國內多所學校同仁研究之用,相信這些機台將發揮應有的功能,對彰師及中部同仁提供絕佳的服務。同時以目前的進度及校方的重視和支持,我們可已具備成一個國家級的奈米製程中心的雛形。
This is a report for the second year of the second phase of three-year project. The main task force has been aimed for better supports and services to the local community since we have installed all the equipments purchased in the first phase of three-year project. Major facilities purchased in the first phase such as ICP RIE, High Pressure Reactive Chamber, MBE, and Ion Beam Sputtering System, are all in good condition. These facilities are not only serving our faculty members in this university but also serving the local community at the central part of Taiwan. Especially, the nanotube grown by the high pressure reactive chamber and nanostructured Silicon pilar array with high aspect ratio etched by ICP RIE have demonstrated the real cost-effective planning. The MBE and Ion Beam Sputtering may need more time to fine tune and make good quality samples but the operation shows encouraging progresses. Over all speaking we have established a good quality of nanofabrication center in the central part of Taiwan.
關聯: 國科會計畫, 計畫編號: NSC96-2120-M018-001; 研究期間: 9608-9707
顯示於類別:[物理學系] 國科會計畫

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