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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/19095

Title: 高良率記憶體內建自我冗餘分析與修復方法之研究
Study on High-Yield Built-In Redundancy-Analysis and Self-Repair for Memory
Authors: 黃宗柱
Contributors: 電子工程學系 
Date: 2011
Issue Date: 2014-10-27T08:07:19Z
Publisher: 行政院國家科學委員會
Relation: 國科會計畫, 計畫編號: NSC100-2221-E018-014; 研究期間: 1000-10107
Appears in Collections:[電子工程學系] 國科會計畫

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