English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 24910577      Online Users : 52
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/19102

Title: Built-In Current Sensor Designs Based on the Bulk-Driven Technique
Authors: Huang, Tsung-Chu;Huang, Min-Cheng;Lee, Kuen-Jong
Contributors: 電子工程學系
Keywords: IDDQte st;Built-in Current Sensor;Low Voltage;Bulkdriven Current Mirror
Date: 1997
Issue Date: 2014-10-27T08:08:03Z
Abstract: Recently the bulk-driven current mirror technique has been employed in built-in current sensors for low voltage environment. This paper proposes 4 arrangements of built-in current sensors based on this technique. They are mainly different in biasing schemes and respectively take the advantages of simplicity, accuracy, flexibility and low power dissipation. From experiments, these sensors have small performance impact which causes only 0.3 V of power supply voltage drop and 0.3 ns delay of circuit speed degradation. These sensors require single external power supply and small area overhead.
Relation: Proceedings of the 1997 6th Asian Test Symposium, : 384-389
Appears in Collections:[電子工程學系] 會議論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback