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NCUEIR > College of Engineering > eedept > Proceedings > Item 987654321/19128

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/19128

Title:	Three-Transistor DRAM-Based Content Addressable Memory Design for Reliability and Area Efficiency
Authors:	Hsu, Wei-Ning;Wu, Tsu-Hsin;Huang, Tsung-Chu
Contributors:	電子工程學系
Date:	2009
Issue Date:	2014-10-27T08:08:36Z
Publisher:	IEEE
Abstract:	Content addressable memory is widely used in communication network, inference machine and cache system. In this paper a three-transistor DRAM-based content addressable memory cell design is proposed based on the Berger and m-out-of-n codes. The coding cannot only approve to reduce the redundant transistors but also provide a totally self-check for refresh and error detection mechanism for reliability. A novel Berger invert code is presented for improve the dependability for about 21% and information energy for 25%. From a variety of postlayout SPICE simulations, the search-match delay time cab be controlled under typical DRAM-based CAM level and the area efficient can be improved by almost double.
Relation:	Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT), : 38-43
Appears in Collections:	[eedept] Proceedings

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